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Simulation approach for studying the performances of original superstrate CIGS thin films solar cells

Identifieur interne : 002561 ( Main/Repository ); précédent : 002560; suivant : 002562

Simulation approach for studying the performances of original superstrate CIGS thin films solar cells

Auteurs : RBID : Pascal:11-0433241

Descripteurs français

Pascal (Inist)
- Simulation numérique, Dispositif couche mince, Oxyde d'étain, Microélectronique, Cristal lamellaire, Optimisation, Dispositif photovoltaïque, Caractéristique courant tension, Densité courant, Epaisseur couche, Densité porteur charge, Rendement quantique, Spectre visible, Cellule solaire, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Cuivre, Gallium, SnO2, In2Se3, 8460J, 7361, 6855J, Dispositif photonique.
Wicri :
- concept : Microélectronique, Cuivre.

English descriptors

KwdEn :
- Charge carrier density, Copper, Copper selenides, Current density, Gallium, Gallium selenides, Indium selenides, Layer thickness, Layered crystals, Microelectronics, Numerical simulation, Optimization, Photonic device, Photovoltaic cell, Quantum yield, Solar cell, Thin film device, Tin oxide, Visible spectrum, Voltage current curve.

Abstract

In this work, we report on the performances of superstrate Cu(In,Ga)Se₂ (CIGS) thin film solar cells with an alternative SLG/SnO₂:F/CIGS/In₂Se₃/Zn structure using AMPS-1D (Analysis of Microelectronic and Photonic structures) device simulator. An inverted surface layer, n-type CIGS layer, is inserted between the In₂Se₃ buffer and CIGS absorber layers and the SnO₂:F layer is just a transparent conducting oxide (TCO). The simulation has been carried out by lighting through SnO₂:F. The obtained results show that the existence of so-called 'ordered defect compound' (ODC) layer in such a structure is the critical factor responsible for the optimization of the performances. Photovoltaic parameters were determined using the current density-voltage (J-V) curve. An optimal absorber and ODC layer thickness has been estimated, that improve significantly the devices efficiency exceeding 15% AM1.5 G. The variation of carrier density in In₂Se₃ layer has an influence on the superstrate CIGS cells performances. Moreover, the quantum efficiency (Q.E.) characteristics display a maximum value of about 80% in the visible range.

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Pascal:11-0433241

Le document en format XML

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<author><name sortKey="Bouchama, I" uniqKey="Bouchama I">I. Bouchama</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire Procédés Matériaux et Energie solaire PROMES-CNRS, Rambla de la Thermodynamique, Technosud</s1>
<s2>66100 Perpignan</s2>
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<country>France</country>
<placeName><region type="region" nuts="2">Languedoc-Roussillon</region>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire L.I.S., Université Ferhat Abbas de Sétif</s1>
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<author><name sortKey="Djessas, K" uniqKey="Djessas K">K. Djessas</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire Procédés Matériaux et Energie solaire PROMES-CNRS, Rambla de la Thermodynamique, Technosud</s1>
<s2>66100 Perpignan</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Languedoc-Roussillon</region>
<settlement type="city">Perpignan</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Djahli, F" uniqKey="Djahli F">F. Djahli</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire L.I.S., Université Ferhat Abbas de Sétif</s1>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Laboratoire L.I.S., Université Ferhat Abbas de Sétif</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bouloufa, A" uniqKey="Bouloufa A">A. Bouloufa</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratoires C.C.N.S. et E. M., Université Ferhat Abbas de Sétif</s1>
<s3>DZA</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Algérie</country>
<wicri:noRegion>Laboratoires C.C.N.S. et E. M., Université Ferhat Abbas de Sétif</wicri:noRegion>
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<publicationStmt><idno type="inist">11-0433241</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0433241 INIST</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carrier density</term>
<term>Copper</term>
<term>Copper selenides</term>
<term>Current density</term>
<term>Gallium</term>
<term>Gallium selenides</term>
<term>Indium selenides</term>
<term>Layer thickness</term>
<term>Layered crystals</term>
<term>Microelectronics</term>
<term>Numerical simulation</term>
<term>Optimization</term>
<term>Photonic device</term>
<term>Photovoltaic cell</term>
<term>Quantum yield</term>
<term>Solar cell</term>
<term>Thin film device</term>
<term>Tin oxide</term>
<term>Visible spectrum</term>
<term>Voltage current curve</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Simulation numérique</term>
<term>Dispositif couche mince</term>
<term>Oxyde d'étain</term>
<term>Microélectronique</term>
<term>Cristal lamellaire</term>
<term>Optimisation</term>
<term>Dispositif photovoltaïque</term>
<term>Caractéristique courant tension</term>
<term>Densité courant</term>
<term>Epaisseur couche</term>
<term>Densité porteur charge</term>
<term>Rendement quantique</term>
<term>Spectre visible</term>
<term>Cellule solaire</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Cuivre</term>
<term>Gallium</term>
<term>SnO2</term>
<term>In2Se3</term>
<term>8460J</term>
<term>7361</term>
<term>6855J</term>
<term>Dispositif photonique</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Microélectronique</term>
<term>Cuivre</term>
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<front><div type="abstract" xml:lang="en">In this work, we report on the performances of superstrate Cu(In,Ga)Se<sub>2</sub>
 (CIGS) thin film solar cells with an alternative SLG/SnO<sub>2</sub>
:F/CIGS/In<sub>2</sub>
Se<sub>3</sub>
/Zn structure using AMPS-1D (Analysis of Microelectronic and Photonic structures) device simulator. An inverted surface layer, n-type CIGS layer, is inserted between the In<sub>2</sub>
Se<sub>3</sub>
 buffer and CIGS absorber layers and the SnO<sub>2</sub>
:F layer is just a transparent conducting oxide (TCO). The simulation has been carried out by lighting through SnO<sub>2</sub>
:F. The obtained results show that the existence of so-called 'ordered defect compound' (ODC) layer in such a structure is the critical factor responsible for the optimization of the performances. Photovoltaic parameters were determined using the current density-voltage (J-V) curve. An optimal absorber and ODC layer thickness has been estimated, that improve significantly the devices efficiency exceeding 15% AM1.5 G. The variation of carrier density in In<sub>2</sub>
Se<sub>3</sub>
 layer has an influence on the superstrate CIGS cells performances. Moreover, the quantum efficiency (Q.E.) characteristics display a maximum value of about 80% in the visible range.</div>
</front>
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</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>519</s2>
</fA05>
<fA06><s2>21</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Simulation approach for studying the performances of original superstrate CIGS thin films solar cells</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the EMRS 2010 Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials Strasbourg, France</s1>
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<fA11 i1="01" i2="1"><s1>BOUCHAMA (I.)</s1>
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<fA11 i1="02" i2="1"><s1>DJESSAS (K.)</s1>
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<fA11 i1="03" i2="1"><s1>DJAHLI (F.)</s1>
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<fA11 i1="04" i2="1"><s1>BOULOUFA (A.)</s1>
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<fA12 i1="01" i2="1"><s1>ROMEO (Alessandro)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>SCHEER (Roland)</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>GUILLEMOLES (Jean François)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>YAMADA (Akira)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>ABOU-RAS (Daniel)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Laboratoire Procédés Matériaux et Energie solaire PROMES-CNRS, Rambla de la Thermodynamique, Technosud</s1>
<s2>66100 Perpignan</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fA14 i1="02"><s1>Laboratoire L.I.S., Université Ferhat Abbas de Sétif</s1>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA14 i1="03"><s1>Laboratoires C.C.N.S. et E. M., Université Ferhat Abbas de Sétif</s1>
<s3>DZA</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>the European Materials Research Society (E-MRS</s1>
<s3>EUR</s3>
<s9>org-cong.</s9>
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<fA20><s1>7280-7283</s1>
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<fA21><s1>2011</s1>
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<fA47 i1="01" i2="1"><s0>11-0433241</s0>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA61><s0>A</s0>
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<fC01 i1="01" l="ENG"><s0>In this work, we report on the performances of superstrate Cu(In,Ga)Se<sub>2</sub>
 (CIGS) thin film solar cells with an alternative SLG/SnO<sub>2</sub>
:F/CIGS/In<sub>2</sub>
Se<sub>3</sub>
/Zn structure using AMPS-1D (Analysis of Microelectronic and Photonic structures) device simulator. An inverted surface layer, n-type CIGS layer, is inserted between the In<sub>2</sub>
Se<sub>3</sub>
 buffer and CIGS absorber layers and the SnO<sub>2</sub>
:F layer is just a transparent conducting oxide (TCO). The simulation has been carried out by lighting through SnO<sub>2</sub>
:F. The obtained results show that the existence of so-called 'ordered defect compound' (ODC) layer in such a structure is the critical factor responsible for the optimization of the performances. Photovoltaic parameters were determined using the current density-voltage (J-V) curve. An optimal absorber and ODC layer thickness has been estimated, that improve significantly the devices efficiency exceeding 15% AM1.5 G. The variation of carrier density in In<sub>2</sub>
Se<sub>3</sub>
 layer has an influence on the superstrate CIGS cells performances. Moreover, the quantum efficiency (Q.E.) characteristics display a maximum value of about 80% in the visible range.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C61</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>230</s0>
</fC02>
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<s5>01</s5>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Cristal lamellaire</s0>
<s5>05</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Layered crystals</s0>
<s5>05</s5>
</fC03>
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<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Optimization</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Optimización</s0>
<s5>06</s5>
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<fC03 i1="07" i2="X" l="FRE"><s0>Dispositif photovoltaïque</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Photovoltaic cell</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Dispositivo fotovoltaico</s0>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
</fC03>
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<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Densité courant</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Current density</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Densidad corriente</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Densité porteur charge</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Charge carrier density</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Concentración portador carga</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Rendement quantique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Quantum yield</s0>
<s5>12</s5>
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<fC03 i1="12" i2="X" l="SPA"><s0>Rendimiento quántico</s0>
<s5>12</s5>
</fC03>
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<s5>13</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<fC03 i1="14" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>14</s5>
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<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Copper selenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Séléniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
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<fC03 i1="16" i2="3" l="ENG"><s0>Gallium selenides</s0>
<s2>NK</s2>
<s5>16</s5>
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<s2>NK</s2>
<s5>17</s5>
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<fC03 i1="17" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>17</s5>
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<fC03 i1="18" i2="X" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Cobre</s0>
<s2>NC</s2>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Gallium</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Gallium</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Galio</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>SnO2</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>In2Se3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>7361</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Dispositif photonique</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Photonic device</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Dispositivo fotónico</s0>
<s4>CD</s4>
<s5>96</s5>
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<fN21><s1>297</s1>
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<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials</s1>
<s2>10</s2>
<s3>Strasbourg FRA</s3>
<s4>2010-06-07</s4>
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   |texte=   Simulation approach for studying the performances of original superstrate CIGS thin films solar cells
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Simulation approach for studying the performances of original superstrate CIGS thin films solar cells

Simulation approach for studying the performances of original superstrate CIGS thin films solar cells

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